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Part Number Overview
Manufacturer Part Number
HSG1002VE-TL-E
Description
RF 0.035A C BAND GERMANIUM NPN
Detailed Description
RF Transistor NPN 3.5V 35mA 38GHz 200mW Surface Mount 4-MFPAK
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
706
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
3.5V
Frequency - Transition
38GHz
Noise Figure (dB Typ @ f)
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain
8dB ~ 19.5dB
Power - Max
200mW
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 5mA, 2V
Current - Collector (Ic) (Max)
35mA
Mounting Type
Surface Mount
Package / Case
4-SMD, Gull Wing
Supplier Device Package
4-MFPAK
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-HSG1002VE-TL-E
RENRNSHSG1002VE-TL-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Renesas Electronics Corporation HSG1002VE-TL-E
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 706
Unit Price: $0.43
Packaging: Bulk
MinMultiplier: 706
Packaging: Bulk
MinMultiplier: 706
Substitutes
-