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Part Number Overview
Manufacturer Part Number
IRFSL11N50A
Description
MOSFET N-CH 500V 11A TO262-3
Detailed Description
N-Channel 500 V 11A (Tc) 190W (Tc) Through Hole TO-262-3
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
550mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1426 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
190W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IRFSL11
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix IRFSL11N50A
Documents & Media
HTML Datasheet
1(IRFSL11N50A)
Quantity Price
-
Substitutes
Part No. : IRFSL11N50APBF
Manufacturer. : Vishay Siliconix
Quantity Available. : 0
Unit Price. : $3.48000
Substitute Type. : Parametric Equivalent
Quantity Available. : 0
Unit Price. : $3.48000
Substitute Type. : Parametric Equivalent