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Part Number Overview
Manufacturer Part Number
SIR412DP-T1-GE3
Description
MOSFET N-CH 25V 20A PPAK SO-8
Detailed Description
N-Channel 25 V 20A (Tc) 3.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
12mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.9W (Ta), 15.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Base Product Number
SIR412
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIR412DPT1GE3
SIR412DP-T1-GE3CT
SIR412DP-T1-GE3DKR
SIR412DP-T1-GE3TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIR412DP-T1-GE3
Documents & Media
Datasheets
1(SIR412DP)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
PCN Assembly/Origin
1(Multiple Fabracation Changes09/Jul/2014)
HTML Datasheet
1(SIR412DP)
Quantity Price
-
Substitutes
Part No. : SIRA18ADP-T1-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 2,585
Unit Price. : $0.41000
Substitute Type. : Similar
Quantity Available. : 2,585
Unit Price. : $0.41000
Substitute Type. : Similar
Part No. : CSD16412Q5A
Manufacturer. : Texas Instruments
Quantity Available. : 4,364
Unit Price. : $0.92000
Substitute Type. : Similar
Quantity Available. : 4,364
Unit Price. : $0.92000
Substitute Type. : Similar