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Part Number Overview
Manufacturer Part Number
NTE2378
Description
MOSFET N-CHANNEL 900V 5A TO3P
Detailed Description
N-Channel 900 V 5A (Ta) 120W (Tc) Through Hole TO-3P
Manufacturer
NTE Electronics, Inc
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
NTE Electronics, Inc
Series
-
Package
Bag
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NTE Electronics, Inc NTE2378
Documents & Media
Datasheets
1(NTE23xx Datasheet)
Environmental Information
()
HTML Datasheet
1(NTE23xx Datasheet)
Quantity Price
Quantity: 100
Unit Price: $5.79
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 50
Unit Price: $5.93
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 20
Unit Price: $6.28
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 10
Unit Price: $6.63
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Quantity: 1
Unit Price: $6.98
Packaging: Bag
MinMultiplier: 1
Packaging: Bag
MinMultiplier: 1
Substitutes
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