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Part Number Overview
Manufacturer Part Number
TSM061NA03CV RGG
Description
MOSFET N-CH 30V 66A 8PDFN
Detailed Description
N-Channel 30 V 66A (Tc) 44.6W (Tc) Surface Mount 8-PDFN (3.1x3.1)
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1136 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
44.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (3.1x3.1)
Package / Case
8-PowerWDFN
Base Product Number
TSM061
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TSM061NA03CVRGGCT
TSM061NA03CV RGGDKR-ND
TSM061NA03CVRGGTR
TSM061NA03CV RGGTR
TSM061NA03CVRGGDKR
TSM061NA03CV RGGCT
TSM061NA03CV RGGCT-ND
TSM061NA03CV RGGDKR
TSM061NA03CV RGGTR-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM061NA03CV RGG
Documents & Media
Datasheets
1(TSM061NA03CV)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev 17/Sep/2021)
HTML Datasheet
1(TSM061NA03CV)
Quantity Price
Quantity: 1
Unit Price: $1.14
Packaging: Cut Tape (CT)
MinMultiplier: 1
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 1
Unit Price: $1.14
Packaging: Digi-Reel®
MinMultiplier: 1
Packaging: Digi-Reel®
MinMultiplier: 1
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