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Part Number Overview
Manufacturer Part Number
BSC889N03LSGATMA1
Description
MOSFET N-CH 30V 13A/45A TDSON
Detailed Description
N-Channel 30 V 13A (Ta), 45A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 28W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
BSC889N03LS GDKR-ND
IFEINFBSC889N03LSGATMA1
BSC889N03LSGATMA1DKR
BSC889N03LS G-ND
BSC889N03LSG
BSC889N03LSGATMA1TR
BSC889N03LS GCT
BSC889N03LS G
BSC889N03LS GCT-ND
2156-BSC889N03LSGATMA1
BSC889N03LS GTR-ND
SP000475952
BSC889N03LSGATMA1CT
BSC889N03LS GDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC889N03LSGATMA1
Documents & Media
Datasheets
1(BSC889N03LS G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSC889N03LS G)
Quantity Price
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