Part Number Overview

Manufacturer Part Number
STP25NM60N
Description
MOSFET N-CH 600V 21A TO220AB
Detailed Description
N-Channel 600 V 21A (Tc) 160W (Tc) Through Hole TO-220
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
MDmesh™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
84 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
STP25N

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STP25NM60N

Documents & Media

Datasheets
1(STx25NM60N(-1))
HTML Datasheet
1(STx25NM60N(-1))

Quantity Price

-

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