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Part Number Overview
Manufacturer Part Number
STH80N10F7-2
Description
MOSFET N-CH 100V 80A H2PAK-2
Detailed Description
N-Channel 100 V 80A (Tc) 110W (Tc) Surface Mount H2PAK-2
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
STH80N10F7-2 Models
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
DeepGATE™, STripFET™ VII
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3100 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-2
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STH80N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-497-14980-6
497-14980-1
-497-14980-1
-497-14980-2
497-14980-2
497-14980-6
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STH80N10F7-2
Documents & Media
Datasheets
1(STx80N10F7,STH80N10F7-2)
PCN Obsolescence/ EOL
1(Mult Dev OBS 2/Apr/2020)
HTML Datasheet
1(STx80N10F7,STH80N10F7-2)
EDA Models
1(STH80N10F7-2 Models)
Quantity Price
-
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