Part Number Overview

Manufacturer Part Number
TRS4E65F,S1Q
Description
DIODE SIL CARB 650V 4A TO220-2L
Detailed Description
Diode 650 V 4A Through Hole TO-220-2L
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
20 Weeks
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 4 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
20 µA @ 650 V
Capacitance @ Vr, F
16pF @ 650V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175°C (Max)
Base Product Number
TRS4E65

Environmental & Export Classifications

ECCN
EAR99
HTSUS
8541.10.0080

Other Names

TRS4E65F,S1Q(S
264-TRS4E65FS1Q

Category

/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Toshiba Semiconductor and Storage TRS4E65F,S1Q

Documents & Media

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Quantity Price

Quantity: 10000
Unit Price: $0.975
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MinMultiplier: 1
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Unit Price: $1.10292
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Unit Price: $1.29988
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Quantity: 100
Unit Price: $1.5362
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Quantity: 50
Unit Price: $1.867
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Quantity: 1
Unit Price: $2.32
Packaging: Tube
MinMultiplier: 1

Substitutes

Part No. : UJ3D06504TS
Manufacturer. : Qorvo
Quantity Available. : 22,775
Unit Price. : $2.09000
Substitute Type. : Similar