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Part Number Overview
Manufacturer Part Number
BUK761R8-30C,118
Description
MOSFET N-CH 30V 100A D2PAK
Detailed Description
N-Channel 30 V 100A (Tc) 333W (Tc) Surface Mount D2PAK
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
800
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10349 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
333W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
BUK76
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
568-5854-1
568-5854-2
934060132118
BUK761R8-30C,118-ND
NEXNXPBUK761R8-30C,118
2156-BUK761R8-30C118-NXTR
568-5854-6
BUK761R830C118
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK761R8-30C,118
Documents & Media
Datasheets
1(BUK761R8-30C)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 29/Dec/2014)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(BUK761R8-30C)
Quantity Price
-
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