Part Number Overview

Manufacturer Part Number
DF200R12KE3HOSA1
Description
IGBT MODULE 1200V 1040W
Detailed Description
IGBT Module Single 1200 V 1040 W Chassis Mount Module
Manufacturer
Infineon Technologies
Standard LeadTime
26 Weeks
Edacad Model
Standard Package
10
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Active
IGBT Type
-
Configuration
Single
Voltage - Collector Emitter Breakdown (Max)
1200 V
Power - Max
1040 W
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 200A
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
14 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 125°C
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
DF200R12

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

DF200R12KE3HOSA1-ND
DF200R12KE3
2156-DF200R12KE3HOSA1
SP000100741
448-DF200R12KE3HOSA1
DF200R12KE3-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies DF200R12KE3HOSA1

Documents & Media

Datasheets
1(DF200R12KE3)
Environmental Information
1(RoHS Certificate)
HTML Datasheet
1(DF200R12KE3)

Quantity Price

Quantity: 80
Unit Price: $108.83275
Packaging: Tray
MinMultiplier: 1
Quantity: 30
Unit Price: $114.01533
Packaging: Tray
MinMultiplier: 1
Quantity: 10
Unit Price: $118.334
Packaging: Tray
MinMultiplier: 1
Quantity: 1
Unit Price: $127.84
Packaging: Tray
MinMultiplier: 1

Substitutes

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