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Part Number Overview
Manufacturer Part Number
STB22NM60N
Description
MOSFET N-CH 600V 16A D2PAK
Detailed Description
N-Channel 600 V 16A (Tc) 125W (Tc) Surface Mount TO-263 (D2PAK)
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
MDmesh™ II
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
220mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (D2PAK)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB22
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
497-10298-2
-497-10298-6
497-10298-1
-497-10298-1
-497-10298-2
497-10298-6
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB22NM60N
Documents & Media
Datasheets
1(STx22NM60N)
Other Related Documents
1(STB22NM60N View All Specifications)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Design/Specification
()
PCN Assembly/Origin
1(IPG-PWR/14/8603 21/Jul/2014)
HTML Datasheet
1(STx22NM60N)
Quantity Price
-
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