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Part Number Overview
Manufacturer Part Number
NP110N055PUG-E1-AY
Description
MOSFET N-CH 55V 110A TO263
Detailed Description
N-Channel 55 V 110A (Tc) 1.8W (Ta), 288W (Tc) Surface Mount TO-263
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
NP110N055PUG-E1-AY Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.4mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
380 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
25700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 288W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation NP110N055PUG-E1-AY
Documents & Media
Datasheets
1(NP110N055PUG)
PCN Obsolescence/ EOL
1(Multiple Devices 28/Aug/2013)
PCN Assembly/Origin
1(Wafer Fabrication Site Change 10/Oct/2013)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(NP110N055PUG-E1-AY Models)
Quantity Price
-
Substitutes
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