China
Spain
Rusia
Italy
GermanySI1431DH-T1-GE3
Part Number Overview
Manufacturer Part Number
SI1431DH-T1-GE3
Description
MOSFET P-CH 30V 1.7A SC70-6
Detailed Description
P-Channel 30 V 1.7A (Ta) 950mW (Ta) Surface Mount SC-70-6
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
200mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
4 nC @ 4.5 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
950mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-70-6
Package / Case
6-TSSOP, SC-88, SOT-363
Base Product Number
SI1431
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI1431DH-T1-GE3
Documents & Media
Datasheets
1(SI1431DH)
Environmental Information
()
HTML Datasheet
1(SI1431DH)
Quantity Price
-
Substitutes
-