Part Number Overview

Manufacturer Part Number
BSB104N08NP3GXUSA1
Description
MOSFET N-CH 80V 13A/50A 2WDSON
Detailed Description
N-Channel 80 V 13A (Ta), 50A (Tc) 2.8W (Ta), 42W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
5,000
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2, CanPAK M™
Package / Case
3-WDSON
Base Product Number
BSB104

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SP001164330
448-BSB104N08NP3GXUSA1TR
BSB104N08NP3GXUSA1-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSB104N08NP3GXUSA1

Documents & Media

Datasheets
1(BSB104N08NP3G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSB104N08NP3G)
Simulation Models
1(MOSFET OptiMOS™ 80V N-Channel Spice Model)

Quantity Price

Quantity: 10000
Unit Price: $0.62006
Packaging: Tape & Reel (TR)
MinMultiplier: 5000
Quantity: 5000
Unit Price: $0.65007
Packaging: Tape & Reel (TR)
MinMultiplier: 5000

Substitutes

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