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Part Number Overview
Manufacturer Part Number
RJK6032DPH-E0#T2
Description
MOSFET N-CH 600V 3A TO251
Detailed Description
N-Channel 600 V 3A (Ta) 40.3W (Tc) Through Hole TO-251
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
RJK6032DPH-E0#T2 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
285 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40.3W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK6032DPH-E0#T2
Documents & Media
Datasheets
1(RJK6032DPH-E0#T2)
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(RJK6032DPH-E0#T2 Models)
Quantity Price
-
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