Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Common Drain
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Vgs(th) (Max) @ Id
2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
6200pF @ 15V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-XFBGA, WLCSP
Supplier Device Package
8-WLCSP (6x2.5)
Base Product Number
EFC4C002