Part Number Overview

Manufacturer Part Number
FDP12N50NZ
Description
MOSFET N-CH 500V 11.5A TO220-3
Detailed Description
N-Channel 500 V 11.5A (Tc) 170W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
800
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
UniFET-II™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
520mOhm @ 5.75A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1235 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FDP12

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

ONSONSFDP12N50NZ
488-FDP12N50NZ
2156-FDP12N50NZ-OS

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDP12N50NZ

Documents & Media

Datasheets
1(FDP(F)12N50NZ)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev Asembly Chg 7/May/2020)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
1(TO220B03 Pkg Drawing)
Product Drawings
1(TO220B03 Pkg Drawing)

Quantity Price

-

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