Part Number Overview

Manufacturer Part Number
SCTW35N65G2V
Description
SICFET N-CH 650V 45A HIP247
Detailed Description
N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™
Manufacturer
STMicroelectronics
Standard LeadTime
52 Weeks
Edacad Model
SCTW35N65G2V Models
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
STMicroelectronics
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 20 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
TO-247-3
Base Product Number
SCTW35

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

-

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics SCTW35N65G2V

Documents & Media

Datasheets
1(SCTW35N65G2V)
PCN Packaging
1(Standard outer labelling 15/Nov/2023)
EDA Models
1(SCTW35N65G2V Models)

Quantity Price

Quantity: 510
Unit Price: $11.716
Packaging: Tube
MinMultiplier: 1
Quantity: 120
Unit Price: $12.928
Packaging: Tube
MinMultiplier: 1
Quantity: 30
Unit Price: $13.736
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $16.97
Packaging: Tube
MinMultiplier: 1

Substitutes

Part No. : G3R60MT07D
Manufacturer. : GeneSiC Semiconductor
Quantity Available. : 2,868
Unit Price. : $10.14000
Substitute Type. : Similar
Part No. : MSC060SMA070B
Manufacturer. : Microchip Technology
Quantity Available. : 17
Unit Price. : $9.64000
Substitute Type. : Similar