Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
7.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
455mOhm @ 3.6A, 15V
Vgs(th) (Max) @ Id
3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
345 pF @ 1000 V
Power Dissipation (Max)
40.8W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
C3M0350120