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Part Number Overview
Manufacturer Part Number
SIHG33N65E-GE3
Description
MOSFET N-CH 650V 32.4A TO247AC
Detailed Description
N-Channel 650 V 32.4A (Tc) 313W (Tc) Through Hole TO-247AC
Manufacturer
Vishay Siliconix
Standard LeadTime
28 Weeks
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
32.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
105mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
173 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
4040 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
313W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AC
Package / Case
TO-247-3
Base Product Number
SIHG33
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIHG33N65E-GE3CT
SIHG33N65E-GE3DKR-ND
SIHG33N65E-GE3TR
SIHG33N65E-GE3TR-ND
SIHG33N65E-GE3DKR
SIHG33N65E-GE3CT-ND
SIHG33N65E-GE3DKRINACTIVE
SIHG33N65E-GE3TRINACTIVE
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIHG33N65E-GE3
Documents & Media
Datasheets
1(SIHG33N65E)
Product Training Modules
1(High Voltage MOSFET E Series and PFC Device Selection)
PCN Assembly/Origin
1(Mosfet Mfg Add 28/Sep/2020)
PCN Packaging
1(Packing Tube Design 19/Sep/2019)
Quantity Price
Quantity: 500
Unit Price: $4.15716
Packaging: Tube
MinMultiplier: 500
Packaging: Tube
MinMultiplier: 500
Substitutes
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