Part Number Overview

Manufacturer Part Number
TSM033NA03CR RLG
Description
MOSFET N-CH 30V 129A 8PDFN
Detailed Description
N-Channel 30 V 129A (Tc) 96W (Tc) Surface Mount 8-PDFN (5x6)
Manufacturer
Taiwan Semiconductor Corporation
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks

Technical specifications

Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
129A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1850 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (5x6)
Package / Case
8-PowerTDFN
Base Product Number
TSM033

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

TSM033NA03CRRLGTR
TSM033NA03CR RLGCT
TSM033NA03CRRLGCT
TSM033NA03CR RLGDKR
TSM033NA03CR RLGTR
TSM033NA03CRRLGDKR
TSM033NA03CR RLGDKR-ND
TSM033NA03CR RLGTR-ND
TSM033NA03CR RLGCT-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM033NA03CR RLG

Documents & Media

Datasheets
1(TSM033NA03CR)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev 17/Sep/2021)
HTML Datasheet
1(TSM033NA03CR)

Quantity Price

Quantity: 10
Unit Price: $0.7
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 1
Unit Price: $0.86
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 10
Unit Price: $0.7
Packaging: Digi-Reel®
MinMultiplier: 1
Quantity: 1
Unit Price: $0.86
Packaging: Digi-Reel®
MinMultiplier: 1

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