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Part Number Overview
Manufacturer Part Number
EPC2101ENGRT
Description
GANFET 2N-CH 60V 9.5A/38A DIE
Detailed Description
Mosfet Array 60V 9.5A, 38A Surface Mount Die
Manufacturer
EPC
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks
Technical specifications
Mfr
EPC
Series
eGaN®
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
9.5A, 38A
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 30V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Base Product Number
EPC210
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0040
Other Names
917-EPC2101ENGRDKR
917-EPC2101ENGRCT
917-EPC2101ENGRTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/EPC EPC2101ENGRT
Documents & Media
Datasheets
1(EPC2101)
Product Training Modules
1(eGaN Integrated GaN Power)
Video File
()
Environmental Information
()
Reference Design Library
1(EPC9037: 22A, 0 ~ 60V, Half H-Bridge)
HTML Datasheet
1(EPC2101)
Quantity Price
-
Substitutes
-