China
Spain
Rusia
Italy
Germany2SC2688-AZ
Part Number Overview
Manufacturer Part Number
2SC2688-AZ
Description
POWER BIPOLAR TRANSISTOR NPN
Detailed Description
Bipolar (BJT) Transistor NPN 300 V 200 mA 80MHz 1.25 W Through Hole TO-126
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
854
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
300 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 5mA, 50mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA, 10V
Power - Max
1.25 W
Frequency - Transition
80MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SC2688-AZ
RENRNS2SC2688-AZ
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SC2688-AZ
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 854
Unit Price: $0.35
Packaging: Bulk
MinMultiplier: 854
Packaging: Bulk
MinMultiplier: 854
Substitutes
-