China
Spain
Rusia
Italy
GermanySIE860DF-T1-E3
Part Number Overview
Manufacturer Part Number
SIE860DF-T1-E3
Description
MOSFET N-CH 30V 60A 10POLARPAK
Detailed Description
N-Channel 30 V 60A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (M)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.1mOhm @ 21.7A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (M)
Package / Case
10-PolarPAK® (M)
Base Product Number
SIE860
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIE860DF-T1-E3
Documents & Media
HTML Datasheet
1(SIE860DF)
Quantity Price
-
Substitutes
-