Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id
2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 400 V
Power Dissipation (Max)
96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
3-PQFN (8x8)
Package / Case
3-PowerDFN