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Part Number Overview
Manufacturer Part Number
IRF6898MTR1PBF
Description
MOSFET N-CH 25V 35A DIRECTFET
Detailed Description
N-Channel 25 V 35A (Ta), 213A (Tc) 2.1W (Ta), 78W (Tc) Surface Mount DIRECTFET™ MX
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
35A (Ta), 213A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
5435 pF @ 13 V
FET Feature
Schottky Diode (Body)
Power Dissipation (Max)
2.1W (Ta), 78W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MX
Package / Case
DirectFET™ Isometric MX
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF6898MTR1PBFTR
SP001523898
IRF6898MTR1PBFDKR
IRF6898MTR1PBFCT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6898MTR1PBF
Documents & Media
Datasheets
1(IRF6898M(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
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Featured Product
1(Data Processing Systems)
PCN Obsolescence/ EOL
1(Multiple Devices 20/Dec/2013)
HTML Datasheet
1(IRF6898M(TR)PbF)
Quantity Price
-
Substitutes
-