China
Spain
Rusia
Italy
GermanyIRFD110
Part Number Overview
Manufacturer Part Number
IRFD110
Description
1A, 100V, 0.600 OHM, N-CHANNEL
Detailed Description
N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
523
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
540mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-DIP, Hexdip, HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Base Product Number
IRFD110
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-IRFD110
HARHARIRFD110
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFD110
Documents & Media
Datasheets
1(IRFD113)
Quantity Price
Quantity: 523
Unit Price: $0.57
Packaging: Bulk
MinMultiplier: 523
Packaging: Bulk
MinMultiplier: 523
Substitutes
-