Part Number Overview

Manufacturer Part Number
SUP85N03-3M6P-GE3
Description
MOSFET N-CH 30V 85A TO220AB
Detailed Description
N-Channel 30 V 85A (Tc) 3.1W (Ta), 78.1W (Tc) Through Hole TO-220AB
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.6mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3535 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 78.1W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
SUP85

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

SUP85N03-3M6P-GE3DKR
SUP85N03-3M6P-GE3CT
SUP85N03-3M6P-GE3TRINACTIVE
SUP85N03-3M6P-GE3DKR-ND
SUP85N03-3M6P-GE3TR-ND
SUP85N03-3M6P-GE3CT-ND
SUP85N03-3M6P-GE3DKRINACTIVE

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SUP85N03-3M6P-GE3

Documents & Media

Datasheets
()
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SUP85N03-3M6P)

Quantity Price

-

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