Part Number Overview

Manufacturer Part Number
HGT1S10N120BNS
Description
IGBT 1200V 35A 298W TO263AB
Detailed Description
IGBT NPT 1200 V 35 A 298 W Surface Mount TO-263 (D2PAK)
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
35 A
Current - Collector Pulsed (Icm)
80 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Power - Max
298 W
Switching Energy
320µJ (on), 800µJ (off)
Input Type
Standard
Gate Charge
100 nC
Td (on/off) @ 25°C
23ns/165ns
Test Condition
960V, 10A, 10Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263 (D2PAK)
Base Product Number
HGT1S10

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

HGT1S10N120BNSFS
HGT1S10N120BNS-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi HGT1S10N120BNS

Documents & Media

Datasheets
1(HGT(G,P)10N120BN, HGT1S10N120BNS)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Jun/2022)
PCN Design/Specification
()
PCN Assembly/Origin
1(Multiple Parts 23/Jun/2022)
PCN Packaging
()

Quantity Price

-

Substitutes

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