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Part Number Overview
Manufacturer Part Number
BSF050N03LQ3G
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 30 V 15A (Ta), 60A (Tc) 2.2W (Ta), 28W (Tc) Surface Mount MG-WDSON-2
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
770
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
15A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 28W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
MG-WDSON-2
Package / Case
DirectFET™ Isometric MX
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFBSF050N03LQ3G
2156-BSF050N03LQ3G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSF050N03LQ3G
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 770
Unit Price: $0.39
Packaging: Bulk
MinMultiplier: 770
Packaging: Bulk
MinMultiplier: 770
Substitutes
-