Part Number Overview

Manufacturer Part Number
NX3008PBKMB,315
Description
MOSFET P-CH 30V 300MA DFN1006B-3
Detailed Description
P-Channel 30 V 300mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
10,193
Supplier Stocks

Technical specifications

Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)
Rds On (Max) @ Id, Vgs
4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.72 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
46 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
360mW (Ta), 2.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DFN1006B-3
Package / Case
SC-101, SOT-883

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

2156-NX3008PBKMB315
NEXNEXNX3008PBKMB,315

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. NX3008PBKMB,315

Documents & Media

Datasheets
1(NX3008PBKMB,315)

Quantity Price

Quantity: 10193
Unit Price: $0.03
Packaging: Bulk
MinMultiplier: 10193

Substitutes

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