Mfr
GeneSiC Semiconductor
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Rds On (Max) @ Id, Vgs
24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id
2.69V @ 15mA
Gate Charge (Qg) (Max) @ Vgs
219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds
5873 pF @ 800 V
Power Dissipation (Max)
542W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4
Base Product Number
G3R20