Mfr
Infineon Technologies
Series
FASTIRFET™, HEXFET®
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
16.4mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
3.6V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
733 pF @ 50 V
Power Dissipation (Max)
3.6W (Ta), 39W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerTDFN