China
Spain
Rusia
Italy
GermanyJAN2N697S
Part Number Overview
Manufacturer Part Number
JAN2N697S
Description
TRANS NPN 40V TO39
Detailed Description
Bipolar (BJT) Transistor NPN 40 V 600 mW Through Hole TO-39 (TO-205AD)
Manufacturer
Microchip Technology
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 10V
Power - Max
600 mW
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/99
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39 (TO-205AD)
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microchip Technology JAN2N697S
Documents & Media
Environmental Information
()
PCN Assembly/Origin
1(Mult Dev Assembly Site 31/Jan/2024)
Quantity Price
-
Substitutes
-