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Part Number Overview
Manufacturer Part Number
SI3460DV-T1-GE3
Description
MOSFET N-CH 20V 5.1A 6TSOP
Detailed Description
N-Channel 20 V 5.1A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
5.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
27mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 1mA (Min)
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
SI3460
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI3460DV-T1-GE3
Documents & Media
Datasheets
1(SI3460DV)
PCN Obsolescence/ EOL
1(Mult Devices 15/Sep/2017)
HTML Datasheet
1(SI3460DV)
Quantity Price
-
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