Part Number Overview

Manufacturer Part Number
BUZ30AHXKSA1
Description
MOSFET N-CH 200V 21A TO220-3
Detailed Description
N-Channel 200 V 21A (Tc) 125W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
500
Supplier Stocks

Technical specifications

Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

BUZ30A H-ND
IFEINFBUZ30AHXKSA1
SP000682990
BUZ30AH
BUZ30A H
2156-BUZ30AHXKSA1

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BUZ30AHXKSA1

Documents & Media

Datasheets
1(BUZ 30A H)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BUZ 30A H)

Quantity Price

-

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