China
Spain
Rusia
Italy
GermanyJAN2N2919L
Part Number Overview
Manufacturer Part Number
JAN2N2919L
Description
TRANS 2NPN 60V 0.03A TO78
Detailed Description
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6
Manufacturer
Microchip Technology
Standard LeadTime
30 Weeks
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Transistor Type
2 NPN (Dual)
Current - Collector (Ic) (Max)
30mA
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 1mA, 5V
Power - Max
350mW
Frequency - Transition
-
Operating Temperature
200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/355
Mounting Type
Through Hole
Package / Case
TO-78-6 Metal Can
Supplier Device Package
TO-78-6
Base Product Number
2N2919
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
1086-20765-MIL
1086-20765
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Microchip Technology JAN2N2919L
Documents & Media
Environmental Information
()
PCN Assembly/Origin
1(Manufacturing Change 23/Feb/2021)
Quantity Price
Quantity: 100
Unit Price: $29.9502
Packaging: Bulk
MinMultiplier: 100
Packaging: Bulk
MinMultiplier: 100
Substitutes
-