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Part Number Overview
Manufacturer Part Number
IPD079N06L3GBTMA1
Description
MOSFET N-CH 60V 50A TO252-3
Detailed Description
N-Channel 60 V 50A (Tc) 79W (Tc) Surface Mount PG-TO252-3
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Base Product Number
IPD079
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPD079N06L3 GCT-ND
IPD079N06L3G
IPD079N06L3 GCT
IPD079N06L3 G-ND
IPD079N06L3 GDKR-ND
IPD079N06L3GBTMA1DKR
IPD079N06L3 G
IPD079N06L3 GDKR
SP000453626
IPD079N06L3GBTMA1TR
IPD079N06L3 GTR-ND
IPD079N06L3GBTMA1CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPD079N06L3GBTMA1
Documents & Media
Datasheets
1(IPD079N06L3 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
PCN Packaging
()
HTML Datasheet
1(IPD079N06L3 G)
Simulation Models
1(MOSFET OptiMOS™ 60V N-Channel Spice Model)
Quantity Price
-
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