Part Number Overview

Manufacturer Part Number
APT4F120K
Description
MOSFET N-CH 1200V 4A TO220
Detailed Description
N-Channel 1200 V 4A (Tc) 225W (Tc) Through Hole TO-220
Manufacturer
Microchip Technology
Standard LeadTime
Edacad Model
APT4F120K Models
Standard Package
50
Supplier Stocks

Technical specifications

Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1385 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
225W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

APT4F120KMI
APT4F120KMI-ND

Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microchip Technology APT4F120K

Documents & Media

Datasheets
()
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 30/Apr/2015)
PCN Assembly/Origin
1(Fab Site 27/Jul/2022)
HTML Datasheet
()
EDA Models
1(APT4F120K Models)

Quantity Price

-

Substitutes

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Manufacturer. : IXYS
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