Part Number Overview

Manufacturer Part Number
IXTH3N200P3HV
Description
MOSFET N-CH 2000V 3A TO247
Detailed Description
N-Channel 2000 V 3A (Tc) 520W (Tc) Through Hole TO-247 (IXTH)
Manufacturer
IXYS
Standard LeadTime
43 Weeks
Edacad Model
Standard Package
30
Supplier Stocks

Technical specifications

Mfr
IXYS
Series
Polar P3™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1860 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 (IXTH)
Package / Case
TO-247-3
Base Product Number
IXTH3

Environmental & Export Classifications

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTH3N200P3HV

Documents & Media

Datasheets
1(IXT(H,T)3N200P3HV)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(IXT(H,T)3N200P3HV)

Quantity Price

Quantity: 100
Unit Price: $24.5195
Packaging: Tube
MinMultiplier: 1
Quantity: 10
Unit Price: $28.034
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $31.55
Packaging: Tube
MinMultiplier: 1

Substitutes

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