Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
180mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
110 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
700mW (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WEMT
Package / Case
6-SMD, Flat Leads
Base Product Number
ES6U2