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Part Number Overview
Manufacturer Part Number
STB10NK60Z-1
Description
MOSFET N-CH 600V 10A I2PAK
Detailed Description
N-Channel 600 V 10A (Tc) 115W (Tc) Through Hole I2PAK
Manufacturer
STMicroelectronics
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
STMicroelectronics
Series
SuperMESH™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
750mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
115W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
STB10N
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB10NK60Z-1
Documents & Media
Datasheets
1(STx10NK60Z)
Other Related Documents
1(STB10NK60Z View All Specifications)
PCN Obsolescence/ EOL
1(Mult Dev OBS 3/Jul/2020)
HTML Datasheet
1(STx10NK60Z)
Quantity Price
-
Substitutes
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