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Part Number Overview
Manufacturer Part Number
AUIRF7665S2TR
Description
MOSFET N-CH 100V 4.1A DIRECTFET
Detailed Description
N-Channel 100 V 4.1A (Ta), 14.4A (Tc) 2.4W (Ta), 30W (Tc) Surface Mount DIRECTFET SB
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
4,800
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
4.1A (Ta), 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
62mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id
5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
515 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 30W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET SB
Package / Case
DirectFET™ Isometric SB
Base Product Number
AUIRF7665
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001519440
2156-AUIRF7665S2TR-448
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRF7665S2TR
Documents & Media
Datasheets
1(AUIRF7665S2TR(1))
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRF7665S2TR(1))
Quantity Price
-
Substitutes
-