Part Number Overview

Manufacturer Part Number
RN1966FE(TE85L,F)
Description
TRANS 2NPN PREBIAS 0.1W ES6
Detailed Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
4,000
Supplier Stocks

Technical specifications

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
4.7kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN1966

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Other Names

RN1966FE(TE85LF)DKR
RN1966FETE85LF
RN1966FE(TE85LF)TR
RN1966FE(TE85LF)CT

Category

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/Toshiba Semiconductor and Storage RN1966FE(TE85L,F)

Documents & Media

Datasheets
1(RN1961-66FE)

Quantity Price

Quantity: 8000
Unit Price: $0.04833
Packaging: Tape & Reel (TR)
MinMultiplier: 4000
Quantity: 4000
Unit Price: $0.05097
Packaging: Tape & Reel (TR)
MinMultiplier: 4000

Substitutes

Part No. : RN1106MFV,L3F
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 53,233
Unit Price. : $0.16000
Substitute Type. : Similar