Part Number Overview

Manufacturer Part Number
FQP9N08
Description
MOSFET N-CH 80V 9.3A TO220-3
Detailed Description
N-Channel 80 V 9.3A (Tc) 40W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQP9N08 Models
Standard Package
Supplier Stocks

Technical specifications

Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
210mOhm @ 4.65A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.7 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
250 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP9

Environmental & Export Classifications

Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Other Names

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Category

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP9N08

Documents & Media

Datasheets
1(FQP9N08)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
()
EDA Models
1(FQP9N08 Models)
Product Drawings
1(TO220B03 Pkg Drawing)

Quantity Price

-

Substitutes

Part No. : RCX120N25
Manufacturer. : Rohm Semiconductor
Quantity Available. : 0
Unit Price. : $2.64000
Substitute Type. : Direct