China
Spain
Rusia
Italy
GermanyAUIRLR3410TR
Part Number Overview
Manufacturer Part Number
AUIRLR3410TR
Description
MOSFET N-CH 100V 17A DPAK
Detailed Description
N-Channel 100 V 17A (Tc) 79W (Tc) Surface Mount TO-252AA (DPAK)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number
AUIRLR3410
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFAUIRLR3410TR
SP001519922
2156-AUIRLR3410TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRLR3410TR
Documents & Media
Datasheets
1(AUIRLR3410)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
HTML Datasheet
1(AUIRLR3410)
Quantity Price
-
Substitutes
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