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Part Number Overview
Manufacturer Part Number
FCH043N60
Description
POWER FIELD-EFFECT TRANSISTOR, 7
Detailed Description
N-Channel 600 V 75A (Tc) 592W (Tc) Through Hole TO-247-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
27
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
SuperFET® II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
43mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
215 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
12225 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
592W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FCH043N60
ONSFSCFCH043N60
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCH043N60
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 27
Unit Price: $11.26
Packaging: Bulk
MinMultiplier: 27
Packaging: Bulk
MinMultiplier: 27
Substitutes
-