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Part Number Overview
Manufacturer Part Number
IPS80R1K4P7AKMA1
Description
MOSFET N-CH 800V 4A TO251-3
Detailed Description
N-Channel 800 V 4A (Tc) 32W (Tc) Through Hole PG-TO251-3-11
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,500
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id
3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
32W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-11
Package / Case
TO-251-3 Stub Leads, IPAK
Base Product Number
IPS80R1
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFIPS80R1K4P7AKMA1
SP001422736
2156-IPS80R1K4P7AKMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPS80R1K4P7AKMA1
Documents & Media
Datasheets
1(IPS80R1K4P7)
Other Related Documents
1(Part Number Guide)
Featured Product
()
HTML Datasheet
1(IPS80R1K4P7)
Simulation Models
1(CoolMOS™ Power MOSFET 800V P7 Spice Model)
Quantity Price
-
Substitutes
-