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Part Number Overview
Manufacturer Part Number
PSMN8R5-100ESQ
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description
N-Channel 100 V 100A (Tj) 263W (Tc) Through Hole I2PAK
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
486
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
100A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
111 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5512 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-PSMN8R5-100ESQ
NEXNEXPSMN8R5-100ESQ
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PSMN8R5-100ESQ
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 486
Unit Price: $0.62
Packaging: Bulk
MinMultiplier: 486
Packaging: Bulk
MinMultiplier: 486
Substitutes
-